Open AccessAb-initio simulations of higher Miller index Si:SiO2 interfaces for fin field effect transistor and nanowire transistors
Author(s) -
Hongfei Li,
Yuzheng Guo,
John Robertson,
Yasutoshi Okuno
Publication year - 2016
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4941272
Subject(s) - dangling bond , materials science , nanowire , ab initio , field effect transistor , transistor , passivation , fin , silicon , ab initio quantum chemistry methods , optoelectronics , condensed matter physics , nanotechnology , chemistry , layer (electronics) , electrical engineering , physics , molecule , voltage , organic chemistry , composite material , engineering
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