Open AccessPublisher's Note: “Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices” [Appl. Phys. Lett. 106, 203101 (2015)]
Author(s) -
Myung Ju Kim,
Dong Su Jeon,
Ju Hyun Park,
Tae Geun Kim
Publication year - 2016
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4941106
Subject(s) - tantalum , resistive random access memory , tantalum nitride , random access memory , resistive touchscreen , condensed matter physics , nitride , materials science , optoelectronics , physics , nanotechnology , electrical engineering , computer science , voltage , quantum mechanics , engineering , metallurgy , computer hardware , layer (electronics)
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