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Both unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS and URS is controllable and reversible. The switching operations in BRS mode requires smaller voltage than that in the URS mode. The oxygen vacancies closed to the Cu2O/Ga2O3 interface contributes to the BRS, and the bias-controlling filament formation/rupture in depletion layer is considered to contribute to the URS. The URS happens only in the negative voltage part due to the nature of directionality of the p-n junction. The process reported here can be developed to design memory device

Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

Reversible transition between bipolar and unipolar resistive switching in Cu₂O/Ga₂O₃ binary oxide stacked layer