GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells | Zendy

Peter Hodgson | Zendy; M. Hayne | Zendy; Alexander Robson | Zendy; Qiandong Zhuang | Zendy; Lefteris Danos | Zendy

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GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

Author(s) -

Peter Hodgson,

M. Hayne,

Alexander Robson,

Qiandong Zhuang,

Lefteris Danos

Publication year - 2016

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4940880

Subject(s) - photoluminescence , quantum well , doping , electron , condensed matter physics , materials science , atomic physics , molecular physics , physics , optoelectronics , optics , laser , quantum mechanics

We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/AlxGa1-xAs quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, singleparticle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply charged with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation

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