Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films | Zendy

Xu Wang | Zendy; Zhengwei Chen | Zendy; Fabi Zhang | Zendy; Katsuhiko Saito | Zendy; Tooru Tanaka | Zendy; Mitsuhiro Nishio | Zendy; Qixin Guo | Zendy

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Temperature dependence of Raman scattering in β-(AlGa)2O3 thin films

Author(s) -

Xu Wang,

Zhengwei Chen,

Fabi Zhang,

Katsuhiko Saito,

Tooru Tanaka,

Mitsuhiro Nishio,

Qixin Guo

Publication year - 2016

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4940763

Subject(s) - phonon , raman spectroscopy , raman scattering , atmospheric temperature range , thin film , materials science , condensed matter physics , scattering , lattice (music) , thermal expansion , chemistry , optics , nanotechnology , physics , thermodynamics , acoustics , metallurgy

We report a detailed investigation on temperature-dependent Raman scattering of β-(AlGa)2O3 thin films with different Al content (0-0.72) under the temperature range of 77-300 K. The temperature-dependent Raman shifts and linewidths of the phonon modes were obtained by employing Lorentz fitting. The linewidths broadening of phonon modes with the temperature can be well explained by a model involving the effects of thermal expansion, lattice-mismatch-induced strain, and decay of optical phonon into two and three phonons. It is clearly demonstrated dependence of the linewidths and decay process on the Al content in β-(AlGa)2O3 thin films, which can provide an experimental basis for realization of (AlGa)2O3-based optoelectronic device applications

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