Elemental intermixing within an ultrathin SrRuO3 electrode layer in epitaxial heterostructure BaTiO3/SrRuO3/SrTiO3
Author(s) -
H. B. Zhang,
Ruijuan Qi,
gzhang Ding,
Rong Huang,
Liwang Sun,
ChunGang Duan,
Craig A. J. Fisher,
Junhao Chu,
Yuichi Ikuhara
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4940663
Subject(s) - materials science , heterojunction , epitaxy , ferroelectricity , transmission electron microscopy , electrode , thin film , scanning transmission electron microscopy , perovskite (structure) , layer (electronics) , electron energy loss spectroscopy , crystallographic defect , condensed matter physics , analytical chemistry (journal) , optoelectronics , crystallography , nanotechnology , dielectric , chemistry , physics , chromatography
Aberration corrected scanning transmission electron microscopy is used to directly observe atom columns in an epitaxial BaTiO3 thin film deposited on a 3.6 nm-thick SrRuO3 electrode layer above an SrTiO3 (001) substrate. Compositional gradients across the heterointerfaces were examined using electron energy-loss spectroscopy techniques. It was found that a small amount of Ba and Ti had diffused into the SrRuO3 layer, and that this layer contained a non-negligible concentration of oxygen vacancies. Such point defects are expected to degrade the electrode’s electronic conductivity drastically, resulting in a much longer screening length. This may explain the discrepancy between experimental measurements and theoretical estimates of the ferroelectric critical thickness of a BaTiO3 ferroelectric barrier sandwiched between metallic SrRuO3 electrodes, since theoretical calculations generally assume ideal (stoichiometric) perovskite SrRuO3
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