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Changes in electrical properties of MOS transistor induced by single 14 MeV neutron
Author(s) -
Firoz Haider,
Fuei Pien Chee,
H. Abu Hassan,
S. Saafie,
Afishah Alias
Publication year - 2016
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.4940111
Subject(s) - fluence , materials science , neutron flux , neutron , transistor , saturation (graph theory) , irradiation , optoelectronics , neutron radiation , current (fluid) , saturation current , voltage , nuclear physics , electrical engineering , physics , mathematics , combinatorics , engineering

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