Open AccessRoom-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor
Author(s) -
Junghwan Kim,
Norihiko Miyokawa,
Keisuke Ide,
Yoshitake Toda,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4939939
Subject(s) - materials science , optoelectronics , thin film , thin film transistor , amorphous solid , phosphor , fabrication , doping , semiconductor , oxide , oxygen , excited state , nanotechnology , chemistry , metallurgy , layer (electronics) , medicine , alternative medicine , physics , organic chemistry , pathology , nuclear physics
We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom