Open AccessPerpendicular magnetic anisotropy in Mn2CoAl thin film
Author(s) -
Niuyi Sun,
Y. Q. Zhang,
Huarui Fu,
William Romero,
Caiyin You,
R. Shan
Publication year - 2016
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4939934
Subject(s) - spintronics , condensed matter physics , materials science , thin film , magnetic moment , sputter deposition , magnetic anisotropy , substrate (aquarium) , saturation (graph theory) , magnetic domain , epitaxy , magnetism , gapless playback , magnetization , ferromagnetism , sputtering , nanotechnology , magnetic field , layer (electronics) , physics , oceanography , mathematics , quantum mechanics , combinatorics , geology
Heusler compound Mn2CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn2CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn2CoAl films resulting from Mn-O and Co-O bonding at Mn2CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could lead to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom