Open AccessComparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors
Author(s) -
Tarun Agarwal,
Bart Sorée,
Iuliana Radu,
Praveen Raghavan,
Gianluca Fiori,
Giuseppe Iannaccone,
Aaron Thean,
Marc Heyns,
Wim Dehaene
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4939933
Subject(s) - threshold voltage , materials science , field effect transistor , drain induced barrier lowering , transistor , monolayer , optoelectronics , reverse short channel effect , short channel effect , scaling , mosfet , voltage , electrical engineering , nanotechnology , engineering , geometry , mathematics
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