Open AccessAn accurate locally active memristor model for S-type negative differential resistance in NbOx
Author(s) -
Gary A. P. Gibson,
Srinitya Musunuru,
Jiaming Zhang,
Ken Vandenberghe,
James Lee,
ChengChih Hsieh,
Warren B. Jackson,
Yoocharn Jeon,
Dick Henze,
Zhiyong Li,
R. Stanley Williams
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4939913
Subject(s) - memristor , resistive random access memory , niobium , materials science , leakage (economics) , voltage , linearity , crossbar switch , thermal conduction , electrode , optoelectronics , non volatile memory , electronic engineering , nanotechnology , physics , electrical engineering , engineering , composite material , quantum mechanics , economics , metallurgy , macroeconomics
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