Open AccessCritical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
Author(s) -
A. M. Smirnov,
Erin C. Young,
V.E. Bougrov,
James S. Speck,
А. Е. Романов
Publication year - 2016
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4939907
Subject(s) - wurtzite crystal structure , materials science , heterojunction , nitride , slip (aerodynamics) , stress relaxation , condensed matter physics , wide bandgap semiconductor , dislocation , semiconductor , crystallography , optoelectronics , composite material , metallurgy , creep , zinc , thermodynamics , physics , chemistry , layer (electronics)
We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures
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