Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping | Zendy

Shigefusa F. Chichibu | Zendy; Kazunobu Kojima | Zendy; Yoshihiro Yamazaki | Zendy; K. Furusawa | Zendy; Akira Uedono | Zendy

Open Access

Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping

Author(s) -

Shigefusa F. Chichibu,

Kazunobu Kojima,

Yoshihiro Yamazaki,

K. Furusawa,

Akira Uedono

Publication year - 2016

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4939838

Subject(s) - photoluminescence , doping , materials science , exciton , dislocation , transition metal , vacancy defect , carrier lifetime , recombination , wide bandgap semiconductor , band gap , condensed matter physics , optoelectronics , crystallography , silicon , chemistry , physics , biochemistry , composite material , catalysis , gene

Carrier lifetime in nearly threading-dislocation-free ZnOhomoepitaxial films was controlled by doping 3d transition-metals (TMs), Ni and Mn. The photoluminescence lifetime of the near-band-edge emission (τPL) was decreased linearly by increasing TM concentration, indicating that such TMs are predominant nonradiative recombination centers (NRCs). From this relationship, exciton capture-cross-section () of 2.4 × 10−15 cm2 is obtained. Because of native-NRCs (Zn-vacancy complexes) is likely larger than this value, the linear dependence of the internal quantum efficiency on τPL observed in our TM-doped ZnO and unintentionally dopedZnO in literatures indicates that the concentrations of native-NRCs in the latter are “lower than” 1016–1017 cm−3

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