Open AccessStudy on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis
Author(s) -
Xiao Meng,
Lai Wang,
Zhibiao Hao,
Yi Luo,
Changzheng Sun,
Yanjun Han,
Bing Xiong,
Jian Wang,
Hongtao Li
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4939593
Subject(s) - voltage droop , light emitting diode , optoelectronics , materials science , auger effect , diode , carrier lifetime , carrier generation and recombination , leakage (economics) , wide bandgap semiconductor , semiconductor , auger , physics , atomic physics , voltage , quantum mechanics , silicon , voltage divider , economics , macroeconomics
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