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N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1−x−ySixSny are realized by shallow P implant and Ni(Ge1−x−ySixSny) formation after rapid thermal annealing at 400 °C. It is proposed that the ohmic behavior is mainly attributed to the phosphorous segregation effect confirmed by secondary ion mass spectroscopy

Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation