Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation | Zendy

Suyuan Wang | Zendy; Jun Zheng | Zendy; Chunlai Xue | Zendy; Chuanbo Li | Zendy; Yuhua Zuo | Zendy; Buwen Cheng | Zendy; Qiming Wang | Zendy

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Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation

Author(s) -

Suyuan Wang,

Jun Zheng,

Chunlai Xue,

Chuanbo Li,

Yuhua Zuo,

Buwen Cheng,

Qiming Wang

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4939588

Subject(s) - ohmic contact , annealing (glass) , materials science , doping , ternary operation , ion implantation , alloy , silicon , analytical chemistry (journal) , sputtering , crystallography , secondary ion mass spectrometry , optoelectronics , ion , chemistry , metallurgy , thin film , nanotechnology , organic chemistry , layer (electronics) , chromatography , computer science , programming language

N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1−x−ySixSny are realized by shallow P implant and Ni(Ge1−x−ySixSny) formation after rapid thermal annealing at 400 °C. It is proposed that the ohmic behavior is mainly attributed to the phosphorous segregation effect confirmed by secondary ion mass spectroscopy

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