Magnetoresistance of galfenol-based magnetic tunnel junction | Zendy

B. Gobaut | Zendy; Giovanni Vinai | Zendy; C. Castán-Guerrero | Zendy; Damjan Krizmancic | Zendy; H. Rafaqat | Zendy; Stefano Roddaro | Zendy; G. Rossi | Zendy; G. Panaccione | Zendy; M. Eddrief | Zendy; M. Marangolo | Zendy; Piero Torelli | Zendy

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Magnetoresistance of galfenol-based magnetic tunnel junction

Author(s) -

B. Gobaut,

Giovanni Vinai,

C. Castán-Guerrero,

Damjan Krizmancic,

H. Rafaqat,

Stefano Roddaro,

G. Rossi,

G. Panaccione,

M. Eddrief,

M. Marangolo,

Piero Torelli

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4939019

Subject(s) - magnetoresistance , materials science , magnetostriction , ferromagnetism , stack (abstract data type) , optoelectronics , tunnel magnetoresistance , quantum tunnelling , tunnel junction , etching (microfabrication) , molecular beam epitaxy , condensed matter physics , magnetization , electron beam lithography , layer (electronics) , epitaxy , magnetic field , composite material , resist , physics , quantum mechanics , computer science , programming language

International audienceThe manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance(TMR) effect of up to 11.5% in amplitude

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