Open AccessErratum: “Assessment of performance potential of MoS2-based topological insulator field-effect transistors” [J. Appl. Phys. 118, 124502 (2015)]
Author(s) -
Leitao Liu,
Jing Guo
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4938190
Subject(s) - topological insulator , transistor , field effect transistor , physics , condensed matter physics , optoelectronics , materials science , topology (electrical circuits) , quantum mechanics , electrical engineering , engineering , voltage
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