Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers | Zendy

Yutaro Miyano | Zendy; Ryosuke Asafuji | Zendy; Shuhei Yagi | Zendy; Yasuto Hijikata | Zendy; Hiroyuki Yaguchi | Zendy

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Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers

Author(s) -

Yutaro Miyano,

Ryosuke Asafuji,

Shuhei Yagi,

Yasuto Hijikata,

Hiroyuki Yaguchi

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4938126

Subject(s) - photoluminescence , thermal oxidation , stacking , materials science , perpendicular , dislocation , oxide , stacking fault , thermal , optoelectronics , crystallography , chemistry , composite material , metallurgy , geometry , mathematics , organic chemistry , physics , meteorology

We investigated the effect of thermal oxidation on crystalline faults in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation. We also found that line-shaped faults perpendicular to the off-cut direction were formed during oxidation and were stretched and increased with the oxidation time. Since these line-shaped faults were peculiar to the oxidation and stretched/increased with the oxide growth, they were identified as oxidation-induced stacking faults as seen in Si oxidation

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