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High dislocation density of tin induced by electric current
Author(s) -
YiHan Liao,
Chien-Lung Liang,
KwangLung Lin,
Albert T. Wu
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4937909
Subject(s) - dislocation , materials science , recrystallization (geology) , transmission electron microscopy , tin , crystallography , deflection (physics) , diffraction , current density , condensed matter physics , optics , composite material , metallurgy , chemistry , physics , nanotechnology , paleontology , quantum mechanics , biology
A dislocation density of as high as 1017 /m2 in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 103 A/ cm2. The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining

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