Open AccessMicromagnetic modeling of domain wall motion in sub-100-nm-wide wires with individual and periodic edge defects
Author(s) -
Sumit Dutta,
Shamoon Ahmad Siddiqui,
Jean Anne C. Incorvia,
C. A. Ross,
Marc A. Baldo
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4937557
Subject(s) - domain wall (magnetism) , materials science , condensed matter physics , micromagnetics , nanowire , enhanced data rates for gsm evolution , magnetic domain , anisotropy , perpendicular , domain (mathematical analysis) , surface finish , magnetic field , optics , physics , geometry , magnetization , nanotechnology , composite material , telecommunications , mathematical analysis , mathematics , quantum mechanics , computer science
Reducing the switching energy of devices that rely on magnetic domain wall motion requires scaling the devices to widths well below 100 nm, where the nanowire line edge roughness (LER) is an inherent source of domain wall pinning. We investigate the effects of periodic and isolated rectangular notches, triangular notches, changes in anisotropy, and roughness measured from images of fabricatedwires, in sub-100-nm-wide nanowires with in-plane and perpendicular magnetic anisotropy using micromagnetic modeling. Pinning fields calculated for a model based on discretized images of physical wires are compared to experimental measurements. When the width of the domain wall is smaller than the notch period, the domain wall velocity is modulated as the domain wall propagates along the wire. We find that in sub-30-nm-wide wires, edge defects determine the operating threshold and domain wall dynamics
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