Open AccessDislocation core structures in Si-doped GaN
Author(s) -
S. L. Rhode,
Matthew K. Horton,
Wai Yuen Fu,
S.L. Sahonta,
Menno J. Kappers,
Timothy J. Pennycook,
C. J. Humphreys,
Rajiv O. Dusane,
M. A. Moram
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4937457
Subject(s) - dislocation , materials science , doping , transmission electron microscopy , atom (system on chip) , crystallography , core (optical fiber) , silicon , condensed matter physics , molecular physics , optoelectronics , nanotechnology , chemistry , physics , composite material , computer science , embedded system
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