Open AccessControlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
Author(s) -
Alrun A. Günther,
Christoph Hoßbach,
Michael Sawatzki,
Daniel Kasemann,
Johann W. Bartha,
Karl Leo
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4937439
Subject(s) - threshold voltage , transistor , doping , materials science , field effect transistor , organic field effect transistor , optoelectronics , voltage , organic semiconductor , leakage (economics) , inversion (geology) , electrical engineering , paleontology , structural basin , economics , macroeconomics , engineering , biology
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