Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence | Zendy

Peng Wang | Zendy; Wenwu Pan | Zendy; Kai Wang | Zendy; Xiaoyan Wu | Zendy; Yue Li | Zendy; Qian Gong | Zendy; Shumin Wang | Zendy

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Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

Author(s) -

Peng Wang,

Wenwu Pan,

Kai Wang,

Xiaoyan Wu,

Yue Li,

Qian Gong,

Shumin Wang

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4937412

Subject(s) - photoluminescence , molecular beam epitaxy , doping , materials science , bismuth , hall effect , analytical chemistry (journal) , optoelectronics , spontaneous emission , center (category theory) , epitaxy , chemistry , nanotechnology , optics , electrical resistivity and conductivity , crystallography , physics , laser , layer (electronics) , quantum mechanics , chromatography , metallurgy

InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved

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