An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process | Zendy

Takeshi Nagase | Zendy; Ryo Yamashita | Zendy; Atsushi Yabuuchi | Zendy; Jae Yong Jung | Zendy

Open Access

An amorphous phase formation at palladium / silicon oxide (Pd/SiO_x) interface through electron irradiation - electronic excitation process

Author(s) -

Takeshi Nagase,

Ryo Yamashita,

Atsushi Yabuuchi,

Jae Yong Jung

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4936629

Subject(s) - materials science , silicon , palladium , amorphous solid , electron beam processing , oxide , irradiation , excitation , phase (matter) , acceleration voltage , electron excitation , analytical chemistry (journal) , electron , optoelectronics , chemistry , metallurgy , cathode ray , crystallography , electrical engineering , catalysis , quantum mechanics , nuclear physics , engineering , biochemistry , physics , organic chemistry , chromatography

A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiOx) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface

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