Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire | Zendy

Takafumi Uchida | Zendy; Mingyu Jo | Zendy; Atsushi TsurumakiFukuchi | Zendy; Masashi Arita | Zendy; Akira Fujiwara | Zendy; Yasuo Takahashi | Zendy

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Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

Author(s) -

Takafumi Uchida,

Mingyu Jo,

Atsushi TsurumakiFukuchi,

Masashi Arita,

Akira Fujiwara,

Yasuo Takahashi

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4936563

Subject(s) - quantum dot , nanowire , thermal oxidation , materials science , fabrication , optoelectronics , silicon , nanotechnology , silicon nanowires , scalability , computer science , medicine , alternative medicine , pathology , database

Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates. (C) 2015 Author(s)

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