Annealing effect on the structural and electrical performance of Mn-Co-Ni-O films
Author(s) -
Fei Zhang,
Wei Zhou,
Cheng Ouyang,
Jing Wu,
Yanqing Gao,
Zhiming Huang
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4936338
Subject(s) - crystallinity , annealing (glass) , materials science , thin film , electrical resistivity and conductivity , amorphous solid , sputter deposition , ion , analytical chemistry (journal) , sputtering , metallurgy , composite material , crystallography , nanotechnology , chemistry , physics , organic chemistry , chromatography , quantum mechanics
Thin films of Mn1.95Co0.77Ni0.28O4are deposited on amorphous Al2O3 substrate by the magnetron sputtering method with the thickness of 6.5 μm. The effects of annealing treatment are studied on the film structural performance as well as the entropy of Mn-Co-Ni-O(MCNO) films by annealed at 400 ∘C, 500 ∘C, 600 ∘C, 700 ∘C, 800 ∘C respectively. It shows that the crystallinity of the thin film is the best annealed at 700 ∘C and the entropy is the largest because the number of different kinds of ions belonging to the same element equals with each other. After 800 ∘C annealing, the film resistivity is the minimal with the maximal entropy which means the highest stability
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom