Open AccessStructural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD
Author(s) -
Yu Wang,
Meng Yang,
Gang Wang,
Xiaoxu Wei,
Junzhuan Wang,
Yun Li,
Ze-Wen Zou,
Youdou Zheng,
Yi Shi
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4935872
Subject(s) - materials science , amorphous solid , crystallization , germanium , microstructure , chemical vapor deposition , jet (fluid) , shell (structure) , crystallography , chemical physics , chemical engineering , nanotechnology , composite material , metallurgy , silicon , chemistry , thermodynamics , physics , engineering
Amorphous Ge-rich Si1−xGex films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD). The structural evolution of the deposited films annealed at various temperatures (Ta) is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties
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