Pulsed-N2 assisted growth of 5-20 nm thick β-W films | Zendy

Avyaya J. Narasimham | Zendy; Avery Green | Zendy; R. J. Matyi | Zendy; Prasanna Khare | Zendy; Tuan Vo | Zendy; Alain C. Diebold | Zendy; V. P. LaBella | Zendy

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Pulsed-N2 assisted growth of 5-20 nm thick β-W films

Author(s) -

Avyaya J. Narasimham,

Avery Green,

R. J. Matyi,

Prasanna Khare,

Tuan Vo,

Alain C. Diebold,

V. P. LaBella

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4935372

Subject(s) - crystallinity , x ray photoelectron spectroscopy , lattice constant , materials science , analytical chemistry (journal) , diffraction , electrical resistivity and conductivity , nitrogen , x ray crystallography , crystal structure , phase (matter) , crystal (programming language) , crystallography , optics , chemistry , nuclear magnetic resonance , composite material , physics , electrical engineering , organic chemistry , chromatography , engineering , programming language , computer science

A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N2 gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W

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