Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing | Zendy

Ryo Sugano | Zendy; Tomoya Tashiro | Zendy; Tomohito Sekine | Zendy; Kenjiro Fukuda | Zendy; Daisuke Kumaki | Zendy; Shizuo Tokito | Zendy

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Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

Author(s) -

Ryo Sugano,

Tomoya Tashiro,

Tomohito Sekine,

Kenjiro Fukuda,

Daisuke Kumaki,

Shizuo Tokito

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4935342

Subject(s) - ferroelectricity , materials science , annealing (glass) , crystallinity , field effect transistor , optoelectronics , organic semiconductor , transistor , composite material , electrical engineering , voltage , dielectric , engineering

We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer. By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could significantly improve the on/off current ratio to over 104. Considerable changes in the surface morphology and x-ray diffraction patterns were also observed in the P(VDF/TrFE) layer as a result of the annealing process. The enhanced memory effect is attributed to large polarization effects caused by rearranged ferroelectric polymer chains and improved crystallinity in the organic semiconductor layer of the FeFET devices

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