Open AccessEnvironmental stability of high-mobility indium-oxide based transparent electrodes
Author(s) -
Thanaporn Tohsophon,
Ali Dabirian,
Stefaan De Wolf,
Monica MoralesMasis,
Christophe Ballif
Publication year - 2015
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4935125
Subject(s) - materials science , x ray photoelectron spectroscopy , degradation (telecommunications) , sheet resistance , electrode , doping , indium , oxide , indium tin oxide , optoelectronics , electron mobility , thermal stability , analytical chemistry (journal) , chemical engineering , thin film , nanotechnology , layer (electronics) , metallurgy , chromatography , telecommunications , chemistry , computer science , engineering
Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In2O3 (ITO), H-doped In2O3 (IO:H), and Zn-doped In2O3 (IZO) electrodes under damp heat (DH) conditions (85 °C, 85% relative humidity). ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (Rs) degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% Rs degradation, due to losses in electron Hall mobility (μHall). We propose that this degradation results from chemisorbed OH- or H2O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μHall strongly degrades during DH, the optical mobility (μoptical) remains unchanged, indicating that the degradation mainly occurs at grain boundaries
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