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Density functional theory calculations of point defects and hydrogen isotopes in Li4SiO4
Author(s) -
Xiaogang Xiang,
Wenjun Zhu,
Tiecheng Lu,
Tao Gao,
Yanli Shi,
Mao Yang,
Yichao Gong,
Xiaohe Yu,
Lan Feng,
Yong-Kai Wei,
Zhipeng Lu
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4934935
Subject(s) - density functional theory , hydrogen , vacancy defect , fermi level , atomic physics , crystallographic defect , materials science , spectroscopy , chemistry , computational chemistry , crystallography , physics , nuclear physics , organic chemistry , quantum mechanics , electron
The Li4SiO4 is a promising breeder material for future fusion reactors. Radiation induced vacancies and hydrogen isotope related impurities are the major types of point defects in this breeder material. In present study, various kinds of vacancies and hydrogen isotopes related point defects in Li4SiO4 are investigated through density functional theory (DFT) calculations. The band gap of Li4SiO4 is determined by UV-Vis diffuse reflectance spectroscopy experiments. Formation energies of all possible charge states of Li, Si and O vacancies are calculated using DFT methods. Formation energies of possible charge states of hydrogen isotopes substitution for Li and O are also calculated. We found that Li-vacancies will dominate among all vacancies in neutral charge state under radiation conditions and the O, Li, and Si vacancies (VO,VLi,VSi) are stable in charge states +2, -1, -4 for most of the range of Fermi level, respectively. The interstitial hydrogen isotopes (Hi) and substitutional HLi are stable in the charge states +1, 0 for most of the range of Fermi level, respectively. Moreover, substitutional HO are stable in +1 charge states. We also investigated the process of tritium recovery by discussing the interaction between interstitial H and Li-vacancy, O-vacancy, and found that HO+and HLi0are the most common H related defects during radiation process

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