Open AccessThermoelectric conversion efficiency in IV-VI semiconductors with reduced thermal conductivity
Author(s) -
Akihiro Ishida,
Hoang Thi Xuan Thao,
Hidenari Yamamoto,
Yasunori Kinoshita,
Mamoru Ishikiriyama
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4934933
Subject(s) - thermoelectric effect , thermal conductivity , seebeck coefficient , thermoelectric materials , energy conversion efficiency , materials science , electrical resistivity and conductivity , semiconductor , condensed matter physics , boltzmann equation , thermodynamics , optoelectronics , physics , composite material , quantum mechanics
Mid-temperature thermoelectric conversion efficiencies of the IV-VI materials were calculated under the Boltzmann transport theory of carriers, taking the Seebeck, Peltier, and Thomson effects into account. The conversion efficiency was discussed with respect to the lattice thermal conductivity, keeping other parameters such as Seebeck coefficient and electrical conductivity to the same values. If room temperature lattice thermal conductivity is decreased up to 0.5W/mK, the conversion efficiency of a PbS based material becomes as high as 15% with the temperature difference of 500K between 800K and 300K