Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation | Zendy

Kuan-Kan Hu | Zendy; RueyDar Chang | Zendy; WeiYen Woon | Zendy

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Suppression of transient enhanced diffusion in sub-micron patterned silicon template by dislocation loops formation

Author(s) -

Kuan-Kan Hu,

RueyDar Chang,

WeiYen Woon

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4934674

Subject(s) - materials science , silicon , transmission electron microscopy , ion implantation , dopant , scanning electron microscope , diffusion , dislocation , optoelectronics , doping , capacitance , analytical chemistry (journal) , ion , nanotechnology , chemistry , composite material , electrode , physics , organic chemistry , chromatography , thermodynamics

We investigate the evolution of two dimensional transient enhanced diffusion (TED) of phosphorus in sub-micron scale patterned silicon template. Samples doped with low dose phosphorus with and without high dose silicon self-implantation, were annealed for various durations. Dopant diffusion is probed with plane-view scanning capacitance microscopy. The measurement revealed two phases of TED. Significant suppression in the second phase TED is observed for samples with high dose self-implantation. Transmission electron microscopy suggests the suppressed TED is related to the evolution of end of range defect formed around ion implantation sidewalls

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