Open AccessCarrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions
Author(s) -
Salim Berrada,
Marc Bescond,
Nicolas Cavassilas,
Laurent Raymond,
M. Lannoo
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4933392
Subject(s) - dopant , nanowire , materials science , transistor , dielectric , optoelectronics , work (physics) , contact resistance , nanotechnology , doping , electrical engineering , mechanical engineering , engineering , layer (electronics) , voltage
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