Electroforming free resistive switching memory in two-dimensional VOx nanosheets | Zendy

Mrinal K. Hota | Zendy; D. H. Nagaraju | Zendy; Mohamed Nejib Hedhili | Zendy; Husam N. Alshareef | Zendy

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Electroforming free resistive switching memory in two-dimensional VOx nanosheets

Author(s) -

Mrinal K. Hota,

D. H. Nagaraju,

Mohamed Nejib Hedhili,

Husam N. Alshareef

Publication year - 2015

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4933335

Subject(s) - electroforming , resistive random access memory , materials science , optoelectronics , electrode , non volatile memory , hydrothermal circulation , resistive touchscreen , nanotechnology , layer (electronics) , computer science , chemistry , chemical engineering , engineering , computer vision

We report two-dimensional VOx nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistive switching devices. The experimental results demonstrate a highly reproducible, electroforming-free, low SET bias bipolar resistive switching memory performance with endurance for more than 100 cycles maintaining OFF/ON ratio of ∼60 times. These devices show better memory performance as compared to previously reported VOx thin film based devices. The memory mechanism in VOx is proposed to be originated from the migration of oxygen vacancies/ions, an influence of the bottom electrode and existence of multi-oxidation states

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