Structural properties of a-Si films and their effect on aluminum induced crystallization | Zendy

A. Tankut | Zendy; Mehmet Karaman | Zendy; Engin Özkol | Zendy; Sedat Canlı | Zendy; Raşit Turan | Zendy

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Structural properties of a-Si films and their effect on aluminum induced crystallization

Author(s) -

A. Tankut,

Mehmet Karaman,

Engin Özkol,

Sedat Canlı,

Raşit Turan

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4933193

Subject(s) - plasma enhanced chemical vapor deposition , crystallization , materials science , silicon , raman spectroscopy , amorphous silicon , amorphous solid , chemical vapor deposition , fourier transform infrared spectroscopy , evaporation , deposition (geology) , electron beam physical vapor deposition , chemical engineering , analytical chemistry (journal) , crystalline silicon , crystallography , nanotechnology , chemistry , metallurgy , optics , paleontology , physics , chromatography , sediment , biology , engineering , thermodynamics

In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size

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