Open AccessEffects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
Author(s) -
Simon Hammersley,
Menno J. Kappers,
Fabien Massabuau,
S.L. Sahonta,
P. Dawson,
Rachel A. Oliver,
C. J. Humphreys
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4932200
Subject(s) - quantum well , quantum efficiency , optoelectronics , light emitting diode , materials science , spontaneous emission , wide bandgap semiconductor , quantum confined stark effect , photoluminescence , indium , indium gallium nitride , quantum , optics , physics , laser , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom