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Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates
Author(s) -
M. Hasan,
Ting Xie,
Sara C. Barron,
Guannan Liu,
Nhan V. Nguyen,
Abhishek Motayed,
Mulpuri V. Rao,
Ratan Debnath
Publication year - 2015
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4932194
Subject(s) - materials science , non blocking i/o , ultraviolet , heterojunction , photodetector , optoelectronics , polyethylene terephthalate , sputtering , indium tin oxide , sputter deposition , indium , tin oxide , quantum efficiency , thin film , doping , nanotechnology , composite material , biochemistry , chemistry , catalysis
A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either front or back side. Morphology, structural, chemical and optical properties of sputtered NiO and ZnO films were also investigated.

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