Open AccessTransfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates
Author(s) -
Mitsuru Nakata,
Kaoru Toko,
Wipakorn Jevasuwan,
Naoki Fukata,
Noriyuki Saitoh,
Noriko Yoshizawa,
Takashi Suemasu
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4932054
Subject(s) - nanowire , materials science , crystallization , chemical vapor deposition , stacking , transmission electron microscopy , amorphous solid , nanotechnology , crystal (programming language) , germanium , nanoscopic scale , vapor–liquid–solid method , crystal growth , layer (electronics) , optoelectronics , chemical engineering , silicon , crystallography , chemistry , programming language , organic chemistry , computer science , engineering
Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.
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