Open Access5 V driving organic non-volatile memory transistors with poly(vinyl alcohol) gate insulator and poly(3-hexylthiophene) channel layers
Author(s) -
Sungho Nam,
Jooyeok Seo,
Hwajeong Kim,
Youngkyoo Kim
Publication year - 2015
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4932048
Subject(s) - materials science , organic field effect transistor , hysteresis , vinyl alcohol , transistor , electrode , optoelectronics , layer (electronics) , thin film transistor , threshold voltage , field effect transistor , voltage , electrical engineering , nanotechnology , composite material , polymer , chemistry , engineering , physics , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom