Open AccessHole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection
Author(s) -
Shuailong Zhang,
Enyuan Xie,
Tongxing Yan,
Wei Yang,
Johannes Herrnsdof,
Zheng Gong,
I. M. Watson,
Erdan Gu,
Martin D. Dawson,
Xiao Hu
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4931575
Subject(s) - indium , quantum well , electroluminescence , materials science , optoelectronics , piezoelectricity , light emitting diode , electric field , diode , current density , charge carrier density , condensed matter physics , physics , optics , nanotechnology , composite material , doping , laser , layer (electronics) , quantum mechanics
The authors observe the significant penetration of electrically injected holes through InGaN/GaN quantum wells (QWs) with an indium mole fraction of 40%. This effect and its current density dependence were analysed by studies on micro-pixel light-emitting diodes, which allowed current densities to be varied over a wide range up to 5 kA/cm2. The systematic changes in electroluminescence spectra are discussed in the light of the piezoelectric field in the high-indium-content QWs and its screening by the carriers. Simulations were also carried out to clarify the unusual hole transport mechanism and the underlying physics in these high-indium QWs
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