Open AccessInvestigation of new approaches for InGaN growth with high indium content for CPV application
Author(s) -
Muhammad Arif,
Suresh Sundaram,
Jérémy Streque,
Youssef El Gmili,
Renaud Puybaret,
Sofiane Belahsene,
A. Ramdane,
Anthony Martinez,
G. Patriarche,
Thomas Fix,
A. Slaoui,
Paul L. Voss,
JeanPaul Salvestrini,
A. Ougazzaden
Publication year - 2015
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.4931512
Subject(s) - materials science , optoelectronics , indium , nanorod , dislocation , layer (electronics) , luminescence , phase (matter) , light emitting diode , relaxation (psychology) , stress relaxation , composite material , nanotechnology , psychology , chemistry , creep , organic chemistry , social psychology
International audienc
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom