Visualization and analysis of active dopant distribution in a p-i-n structured amorphous silicon solar cell using scanning nonlinear dielectric microscopy | Zendy

K. Hirose | Zendy; Norimichi Chi | Zendy; Yasuo Cho | Zendy

Open Access

Visualization and analysis of active dopant distribution in a p-i-n structured amorphous silicon solar cell using scanning nonlinear dielectric microscopy

Author(s) -

K. Hirose,

Norimichi Chi,

Yasuo Cho

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4931028

Subject(s) - dopant , dielectric , microscopy , materials science , silicon , amorphous silicon , semiconductor , optoelectronics , doping , optics , physics , crystalline silicon

Scanning nonlinear dielectric microscopy (SNDM) and super-higher-order (SHO-) SNDM were used for dopant profiling analysis of a cross-section of the p-i-n structure of an amorphous silicon solar cell. The p-i-n and zigzag structures of each layer boundary were visualized as carrier polarity and density images on 10-20 nm scale through a SNDM measurement. A capacitance-voltage curve was obtained at each pixel in the scan area through a SHO-SNDM measurement. The obtained SNDM and SHO-SNDM data suggest that the i-layer was not completely intrinsic, but was very-low-density p-type

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research