Epitaxial growth of high quality WO3 thin films | Zendy

Xiang Leng | Zendy; J. Pereiro | Zendy; Jure Strle | Zendy; A. T. Bollinger | Zendy; I. Božović | Zendy

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Epitaxial growth of high quality WO3 thin films

Author(s) -

Xiang Leng,

J. Pereiro,

Jure Strle,

A. T. Bollinger,

I. Božović

Publication year - 2015

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4930214

Subject(s) - materials science , epitaxy , monoclinic crystal system , sputter deposition , diffraction , thin film , surface roughness , crystallography , sapphire , sputtering , single crystal , atomic force microscopy , lattice constant , crystal growth , x ray crystallography , surface finish , crystal structure , analytical chemistry (journal) , optics , nanotechnology , composite material , layer (electronics) , laser , chemistry , physics , chromatography

We have grown epitaxial WO3 films on various single-crystal substrates using radio frequency magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on Y AlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. The dependence of the growth modes and the surface morphology on the lattice mismatch are discussed

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