HgCdTe e-avalanche photodiode detector arrays | Zendy

Anand Singh | Zendy; Anupam Shukla | Zendy; R. Pal | Zendy

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HgCdTe e-avalanche photodiode detector arrays

Author(s) -

Anand Singh,

Anupam Shukla,

R. Pal

Publication year - 2015

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4929773

Subject(s) - avalanche photodiode , optoelectronics , detector , materials science , photodiode , dark current , photodetector , optics , physics

Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additional investment

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