Open AccessComment on “Diffusion of n-type dopants in germanium” [Appl. Phys. Rev. 1, 011301 (2014)]
Author(s) -
N. E. B. Cowern,
S. I. Simdyankin,
J. P. Goss,
E. Napolitani,
D. De Salvador,
E. Bruno,
S. Mirabella,
ChiHyung Ahn,
Nick S. Bennett
Publication year - 2015
Publication title -
applied physics reviews
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.084
H-Index - 66
ISSN - 1931-9401
DOI - 10.1063/1.4929762
Subject(s) - diffusion , germanium , dopant , self diffusion , amorphous solid , irradiation , materials science , thermodynamics , condensed matter physics , physics , crystallography , doping , chemistry , nuclear physics , self service , business , marketing , silicon , metallurgy
The authors of the above paper call into question recent evidence on the properties of self-interstitials, I, in Ge [Cowern et al., Phys. Rev. Lett. 110, 155501 (2013)]. We show that this judgment stems from invalid model assumptions during analysis of data on B marker-layer diffusion during proton irradiation, and that a corrected analysis fully supports the reported evidence. As previously stated, I-mediated self-diffusion in Ge exhibits two distinct regimes of temperature, T: high-T, dominated by amorphous-like mono-interstitial clusters - i-morphs - with self-diffusion entropy30k, and low-T, where transport is dominated by simple self-interstitials. In a transitional range centered on 475°C both mechanisms contribute. The experimental I migration energy of 1.84±0.26 eV reported by the Münster group based on measurements of self-diffusion during irradiation at 550°C
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