Open AccessErratum: “Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions” [J. Appl. Phys. 118, 033101 (2015)]
Author(s) -
Feng Zhang,
Masao Ikeda,
Kun Zhou,
Zongshun Liu,
Jianping Liu,
Shuming Zhang,
Hui Yang
Publication year - 2015
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4929635
Subject(s) - electroluminescence , light emitting diode , optoelectronics , current (fluid) , diode , quantum well , materials science , wide bandgap semiconductor , condensed matter physics , physics , optics , nanotechnology , laser , thermodynamics , layer (electronics)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom