Open AccessComparative study on the charge-trapping properties of TaAlO and ZrAlO high-k composites with designed band alignment
Author(s) -
W. Lu,
Chao-Gang Wei,
K. Jiang,
Jiefeng Liu,
JianXin Lu,
Ping Han,
A. D. Li,
Yidong Xia,
Bin Xu,
Jiang Yin,
Z. G. Liu
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4929521
Subject(s) - trapping , conduction band , charge (physics) , materials science , composite number , deposition (geology) , atomic layer deposition , sputtering , silicon , composite material , layer (electronics) , optoelectronics , nanotechnology , thin film , electron , physics , ecology , paleontology , quantum mechanics , sediment , biology
The charge-trapping memory (CTM) structures Pt/Al2O3/TaAlO/Al2O3/p-Si and Pt/Al2O3/ZrAlO/Al2O3/p-Si were fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potentials at the bottom of the conduction band (PBCB) of high-k composites TaAlO and ZrAlO were specially designed. With a lower PBCB difference between TaAlO and p-Si than that between ZrAlO and p-Si, TaAlO CTM device shows a better charge-trapping performance. A density of trapped charges 2.88 × 1013/cm2 at an applied voltage of ±7 V was obtained for TaAlO CTM device, and it could keep about 60% of initially trapped charges after 10 years. It was suggested that the PBCB difference between high-k composite and p-Si dominates their charge-trapping behaviors
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