Low contact resistance in epitaxial graphene devices for quantum metrology
Author(s) -
Tom Yager,
Arseniy Lartsev,
Karin Cedergren,
Rositsa Yakimova,
Vishal Panchal,
Olga Kazakova,
Alexander Tzalenchuk,
Kyung Ho Kim,
Yung Woo Park,
Samuel LaraAvila,
Sergey Kubatkin
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4928653
Subject(s) - graphene , metrology , contact resistance , materials science , monolayer , quantum hall effect , optoelectronics , bilayer graphene , quantum , reproducibility , nanotechnology , quantum metrology , condensed matter physics , optics , physics , chemistry , quantum computer , layer (electronics) , electron , quantum network , quantum mechanics , chromatography
We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Omega up to 11 k Omega. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (less than 10 Omega) suitable for high precision quantum resistance metrology.
Funding Agencies|Graphene Flagship [CNECT-ICT-604391]; Swedish Foundation for Strategic Research (SSF); Linnaeus Centre for Quantum Engineering; Knut and Alice Wallenberg Foundation; Chalmers AoA Nano; Swedish-Korean Basic Research Cooperative Program of the NRF [2014R1A2A1A1 2067266]; EMRP project GraphOhm; EMRP within EURAMET; EMRP within European Union
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