Open AccessVibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy
Author(s) -
Hao Xu,
Yuxin Song,
Wenwu Pan,
Qimiao Chen,
Xiaoyan Wu,
Pengfei Lu,
Qian Gong,
Shumin Wang
Publication year - 2015
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4928217
Subject(s) - raman spectroscopy , molecular beam epitaxy , phonon , materials science , topological insulator , thermoelectric effect , molecular vibration , thin film , epitaxy , coherent anti stokes raman spectroscopy , analytical chemistry (journal) , raman scattering , chemistry , condensed matter physics , optics , nanotechnology , physics , layer (electronics) , chromatography , thermodynamics
Bi4Te3, as one of the phases of the binary Bi–Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films
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